Electrical and structural properties of tungsten Schottky contacts to p-type InP at different annealing temperatures.

Highlights: [•] Effects of annealing on electrical and structural properties of W/p-InP SBD are studied. [•] Maximum barrier height is achieved on W/p-InP SBD upon annealing at 300°C. [•] Interface state density decreases with increasing annealing temperature up to 300°C. [•] W–P interfacial phases are responsible for increase in barrier height after annealing at 300°C. [•] Overall surface morphology of the SBD did not change significantly at elevated temperatures. [ABSTRACT FROM AUTHOR]