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Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit.

Authors :
Md Arshad, M.K.
Kilchytska, V.
Emam, M.
Andrieu, F.
Flandre, D.
Raskin, J.-P.
Source :
Solid-State Electronics. Jul2014, Vol. 97, p38-44. 7p.
Publication Year :
2014

Abstract

Highlights: [•] Parasitic elements significantly impact the RF performances of UTBB devices especially in short channel devices. [•] UTBB devices are capable to meet the ITRS requirement for f T provided the parasitic elements are well tailored. [•] With appropriate configuration, ADG regime is expected to provide improved RF figures of merit. [Copyright &y& Elsevier]

Subjects

Subjects :
*METAL oxide semiconductor field-effect transistors
*SILICON-on-insulator technology
*RADIO frequency
*PERFORMANCE evaluation
*CONFIGURATIONS (Geometry)

Details

Language :
English
ISSN :
00381101
Volume :
97
Database :
Academic Search Index
Journal :
Solid-State Electronics
Publication Type :
Academic Journal
Accession number :
96245538
Full Text :
https://doi.org/10.1016/j.sse.2014.04.027
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