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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes.
- Source :
-
Chinese Physics Letters . Jun2014, Vol. 31 Issue 6, p1-1. 1p. - Publication Year :
- 2014
-
Abstract
- Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmic contact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V2BR/RON,sp value of 194 MW.cm−2. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 31
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 96329086
- Full Text :
- https://doi.org/10.1088/0256-307X/31/6/068502