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Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments.
- Source :
-
Carbon . Sep2014, Vol. 76, p459-463. 5p. - Publication Year :
- 2014
-
Abstract
- Abstract: An amorphous carbon thin film, with through-pores of several tens of nanometers in size, has been synthesized by annealing magnetron sputtered nitrogen-doped carbon thin films at elevated temperature in an inert atmosphere. Based on this nanoporous carbon film, we first report forming-free resistive switching in a two terminal device containing ready-made metal nanofilaments. Such nanoporous carbon-based resistance memory device shows low operation voltages and good endurance and retention performance. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00086223
- Volume :
- 76
- Database :
- Academic Search Index
- Journal :
- Carbon
- Publication Type :
- Academic Journal
- Accession number :
- 96348477
- Full Text :
- https://doi.org/10.1016/j.carbon.2014.04.091