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Synthesis and characterization of PbTe thin films by atomic layer deposition.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . Jun2014, Vol. 211 Issue 6, p1329-1333. 5p. - Publication Year :
- 2014
-
Abstract
- PbTe thin films on silicon substrates were prepared by an atomic layer deposition (ALD) for the first time, using lead (II) bis (2,2,6,6-tetramethyl-3,5-heptanedionato) and (trimethylsilyl) tellurid as ALD precursors, at deposition temperature as low as 170 °C. The formation of a PbTe thin film on the Si substrates was strongly dependent on the growth temperature. X-ray diffraction measurement indicated that thin films were polycrystalline and have characteristic face-centered cubic rock salt structure with a preferential (200) orientation. Scanning electron microscopy showed PbTe thin films were grown in the Volmer-Weber island mode. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 211
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 96408587
- Full Text :
- https://doi.org/10.1002/pssa.201300307