Synthesis and characterization of PbTe thin films by atomic layer deposition.

PbTe thin films on silicon substrates were prepared by an atomic layer deposition (ALD) for the first time, using lead (II) bis (2,2,6,6-tetramethyl-3,5-heptanedionato) and (trimethylsilyl) tellurid as ALD precursors, at deposition temperature as low as 170 °C. The formation of a PbTe thin film on the Si substrates was strongly dependent on the growth temperature. X-ray diffraction measurement indicated that thin films were polycrystalline and have characteristic face-centered cubic rock salt structure with a preferential (200) orientation. Scanning electron microscopy showed PbTe thin films were grown in the Volmer-Weber island mode. [ABSTRACT FROM AUTHOR]