High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in n-InAs matrix.

Room-temperature electroluminescence is observed for the first time in type-II heterostructures based on InSb quantum dashes embedded in a narrow-gap n-InAs matrix. The heterostructures exhibit positive luminescence at wavelengths in the range 3-4 μm. This is due to the interfacial radiative transitions of electrons from self-consistent quantum wells on the side of InAs matrix layers across the broken-gap type-II InSb/InAs heterointerface to quantum-well hole levels in the InSb quantum dashes, situated in the energy gap of the matrix near the InAs conduction-band bottom. [ABSTRACT FROM AUTHOR]