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Unified physical I-V model including self-heating effect for fully depleted SOI/MOSFET's.
- Source :
-
IEEE Transactions on Electron Devices . Aug96, Vol. 43 Issue 8, p1291. 6p. 2 Black and White Photographs, 3 Charts, 8 Graphs. - Publication Year :
- 1996
-
Abstract
- Presents a physically based analytical model for fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field-effect transistors (MOSFET) Inclusion of the self-heating effect (SHE); Suitability of the model for use in circuit simulators; Other actors taken into account by the model.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 43
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 9701274337
- Full Text :
- https://doi.org/10.1109/16.506782