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Mechanism of stress-induced leakage current in MOS capacitors.
- Source :
-
IEEE Transactions on Electron Devices . Feb97, Vol. 44 Issue 2, p317. 7p. 2 Black and White Photographs, 14 Graphs. - Publication Year :
- 1997
-
Abstract
- Discusses stress-induced leakage current (SILC) as a result of inelastic rather than elastic trap-assisted tunneling. Thickness dependence at high fields; Use of SILC measurements; Leakage current conduction mechanism; Models of SILC; SILC as a scaling limitation.
- Subjects :
- *SEMICONDUCTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 44
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 9702231279
- Full Text :
- https://doi.org/10.1109/16.557724