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Electron attachment to excited states of silane: Implications for plasma processing discharges.
- Source :
-
Journal of Applied Physics . 6/15/1997, Vol. 81 Issue 12, p7715. 13p. 3 Diagrams, 1 Chart, 9 Graphs. - Publication Year :
- 1997
-
Abstract
- Describes evidences presented that electron attachment to high-lying electronically excited states of silane have large electron attachment cross sections. Causes of silane's enhanced negative-ion formation; Measurement of electron attachment to thermally excited vibrational states of the ground electronic state of silane; Modeling of silane discharges.
- Subjects :
- *SILANE
*REACTIVITY (Chemistry)
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 81
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 9709226102
- Full Text :
- https://doi.org/10.1063/1.365381