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Electron attachment to excited states of silane: Implications for plasma processing discharges.

Authors :
Pinnaduwage, Lal A.
Datskos, Panos G.
Source :
Journal of Applied Physics. 6/15/1997, Vol. 81 Issue 12, p7715. 13p. 3 Diagrams, 1 Chart, 9 Graphs.
Publication Year :
1997

Abstract

Describes evidences presented that electron attachment to high-lying electronically excited states of silane have large electron attachment cross sections. Causes of silane's enhanced negative-ion formation; Measurement of electron attachment to thermally excited vibrational states of the ground electronic state of silane; Modeling of silane discharges.

Subjects

Subjects :
*SILANE
*REACTIVITY (Chemistry)

Details

Language :
English
ISSN :
00218979
Volume :
81
Issue :
12
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
9709226102
Full Text :
https://doi.org/10.1063/1.365381