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Amorphous silicon TFTs get ultrathin film channel.

Authors :
Robinson, Gail
Source :
Electronic Engineering Times (01921541). 09/15/97, Issue 971, p41. 2p.
Publication Year :
1997

Abstract

Focuses on the development of trilayer thin-film-transistor (TFT) process to build higher performance liquid crystal displays (LCD) devised by Penn State University researchers. Key advantage of the Penn State process; Two process used to achieve hydrogenated amorphous silicon TFT; Method used in the process.

Details

Language :
English
ISSN :
01921541
Issue :
971
Database :
Academic Search Index
Journal :
Electronic Engineering Times (01921541)
Publication Type :
Periodical
Accession number :
9710182513