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Predicting CMOS speed with gate oxide and voltage scaling...
- Source :
-
IEEE Transactions on Electron Devices . Nov97, Vol. 44 Issue 11, p1951. 7p. 1 Chart, 12 Graphs. - Publication Year :
- 1997
-
Abstract
- Studies the sub-quarter micron metal-oxide semiconductor field effect transistors (MOSFET's) and ring oscillators at supply voltage that can be predicted from a universal mobility model. Discussion of the development of analytical equations of electron and hole mobility; Prediction and interconnect loading effect; Conclusions.
- Subjects :
- *METAL oxide semiconductor field-effect transistors
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 44
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 9711033656
- Full Text :
- https://doi.org/10.1109/16.641365