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Topological Excitations in Semiconductor Heterostructures.
- Source :
-
AIP Conference Proceedings . Dec2013, Vol. 1566 Issue 1, p265-266. 2p. - Publication Year :
- 2013
-
Abstract
- Topological defects play an important role in the melting phenomena in two-dimensions. In this work, we report experimental observation of topological defect induced melting in two-dimensional electron systems (2DES) in the presence of strong Coulomb interaction and disorder. The phenomenon is characterised by measurement of conductivity which goes to zero in a Berezinskii- Kosterlitz-Thouless like transition. Further evidence is provided via low-frequency conductivity noise measurements. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 1566
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 97117744
- Full Text :
- https://doi.org/10.1063/1.4848387