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Investigation of L-related indirect transitions in GaAs/GaAlAs multiquantum wells under...

Authors :
Dai, N.
Huang, D.
Source :
Journal of Applied Physics. 12/15/1997, Vol. 82 Issue 12, p6359. 3p. 1 Chart, 4 Graphs.
Publication Year :
1997

Abstract

Investigates the L-related indirect transitions in GaAs/GaAlAs multiquantum wells under hydrostatic pressure. Characteristics of the semiconductor quantum wells (QWs);

Subjects

Subjects :
*QUANTUM wells

Details

Language :
English
ISSN :
00218979
Volume :
82
Issue :
12
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
9712232957
Full Text :
https://doi.org/10.1063/1.366529