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Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode.
- Source :
-
Journal of Applied Physics . 2014, Vol. 116 Issue 3, p033105-1-033105-6. 6p. 5 Graphs. - Publication Year :
- 2014
-
Abstract
- Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2-10 μm in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30-40 meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (~100 μm) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 116
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 97191846
- Full Text :
- https://doi.org/10.1063/1.4890497