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Crossbar RRAM Arrays: Selector Device Requirements During Write Operation.
- Source :
-
IEEE Transactions on Electron Devices . Aug2014, Vol. 61 Issue 8, p2820-2826. 7p. - Publication Year :
- 2014
-
Abstract
- A comprehensive analysis of write operations (SET and RESET) in a resistance-change memory (resistive random access memory) crossbar array is carried out. Three types of resistive switching memory cells-nonlinear, rectifying-SET, and rectifying-RESET-are compared with each other in terms of voltage delivery, current delivery, and power consumption. Two different write schemes, V/2 and V/3, were considered, and the V/2 write scheme is preferred due to much lower power consumption. A simple numerical method was developed that simulates entire current flows and node voltages within a crossbar array and provides a quantitative tool for the accurate analysis of crossbar arrays and guidelines for developing reliable write operation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 61
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 97237448
- Full Text :
- https://doi.org/10.1109/TED.2014.2327514