Cite
Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs.
MLA
Tang, Zhikai, et al. “Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs.” IEEE Transactions on Electron Devices, vol. 61, no. 8, Aug. 2014, pp. 2785–92. EBSCOhost, https://doi.org/10.1109/TED.2014.2333063.
APA
Tang, Z., Huang, S., Tang, X., Li, B., & Chen, K. J. (2014). Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs. IEEE Transactions on Electron Devices, 61(8), 2785–2792. https://doi.org/10.1109/TED.2014.2333063
Chicago
Tang, Zhikai, Sen Huang, Xi Tang, Baikui Li, and Kevin J. Chen. 2014. “Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs.” IEEE Transactions on Electron Devices 61 (8): 2785–92. doi:10.1109/TED.2014.2333063.