Cite
P-doping-free III-nitride high electron mobility light-emitting diodes and transistors.
MLA
Li, Baikui, et al. “P-Doping-Free III-Nitride High Electron Mobility Light-Emitting Diodes and Transistors.” Applied Physics Letters, vol. 105, no. 3, July 2014, pp. 1–5. EBSCOhost, https://doi.org/10.1063/1.4890238.
APA
Li, B., Tang, X., Wang, J., & Chen, K. J. (2014). P-doping-free III-nitride high electron mobility light-emitting diodes and transistors. Applied Physics Letters, 105(3), 1–5. https://doi.org/10.1063/1.4890238
Chicago
Li, Baikui, Xi Tang, Jiannong Wang, and Kevin J. Chen. 2014. “P-Doping-Free III-Nitride High Electron Mobility Light-Emitting Diodes and Transistors.” Applied Physics Letters 105 (3): 1–5. doi:10.1063/1.4890238.