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Describing the heat capacity of III-VI compound semiconductors in a fractal model.
- Source :
-
Inorganic Materials . Sep2014, Vol. 50 Issue 9, p903-906. 4p. - Publication Year :
- 2014
-
Abstract
- The fractal model of heat capacity is shown to be applicable to GaSe, GaSe, GaTe, GaTe, InSe, and InTe. The parameters of the model are determined: characteristic temperature and temperature-dependent multifractal (fracton) dimension. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00201685
- Volume :
- 50
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Inorganic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 97333091
- Full Text :
- https://doi.org/10.1134/S0020168514090155