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White light-emitting quantum dot diodes and tuning of luminescence processes.
- Source :
-
Applied Physics A: Materials Science & Processing . Sep2014, Vol. 116 Issue 3, p941-945. 5p. - Publication Year :
- 2014
-
Abstract
- A novel white light-emitting diode based on a large Stokes shift (~200 nm) and using pure green light-emitting CdSeS quantum dots (QDs) with an Ag/ZnSnO/QDs/spiro-TPD/ITO structure has been fabricated in which ZnSnO and spiro-TPD are served as the electron and hole transport layer, respectively. The large Stokes shift of the CdSeS QDs excludes potentially Förster resonance energy transfer process, which allows spiro-TPD to act as both an emitter and hole transport layer. The devices exhibit a wide EL spectrum consisting of three components: blue emission from spiro-TPD, green emission from QD band-band recombination, and red emission from QD surface-state recombination. We further found that as the intensity ratios among these three components vary with bias the color of the QD light-emitting diodes is tunable. The device displays a good white light-emitting characteristic with CIE coordinates of (0.281, 0.384) at an appropriate bias. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 116
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 97460189
- Full Text :
- https://doi.org/10.1007/s00339-014-8465-5