A pressure dependence model for the band gap energy of the dilute nitride GaNP.

The pressure dependence of the band gap energy of the dilute nitride GaNP is analyzed. It is found that the pressure dependence of the Γ conduction band minimum (CBM) is stronger than that of the X CBM. We also find that the energy difference between the X CBM and the Γ CBM in GaNP becomes large with increasing N content. In order to describe the pressure dependence of the band gap energy of the dilute nitride GaNP, a model is developed. Based on the model, we obtain the energy difference between the X CBM and the Γ CBM in GaNP at standard atmospheric pressure. It agrees well with the results obtained by other method. [ABSTRACT FROM AUTHOR]