Back to Search Start Over

Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations.

Authors :
Hussin, Razaidi
Amoroso, Salvatore Maria
Gerrer, Louis
Kaczer, Ben
Weckx, Pieter
Franco, Jacopo
Vanderheyden, Annelies
Vanhaeren, Danielle
Horiguchi, Naoto
Asenov, Asen
Source :
IEEE Transactions on Electron Devices. Sep2014, Vol. 61 Issue 9, p3265-3273. 9p.
Publication Year :
2014

Abstract

This paper presents an extensive study of the interplay between as-fabricated (time-zero) variability and gate oxide reliability (time-dependent variability) in contemporary pMOSFETs. We compare physical simulation results using the atomistic simulator GARAND with experimental measurements. The TCAD simulations are accurately calibrated to reproduce the average transistor behavior. When random discrete dopants, line edge roughness, and gate polysilicon granularity are considered, the simulations accurately reproduce time-zero (as-fabricated) statistical variability, as well as time-dependent variability data, represented by threshold voltage shift distributions. The calibrated simulations are then used to predict the reliability behavior at different bias conditions and for different device dimensions. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
00189383
Volume :
61
Issue :
9
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
97616199
Full Text :
https://doi.org/10.1109/TED.2014.2336698