Cite
Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires.
MLA
Tu, Chia-Hao, et al. “Resistive Memory Devices with High Switching Endurance through Single Filaments in Bi-Crystal CuO Nanowires.” Journal of Alloys & Compounds, vol. 615, Dec. 2014, pp. 754–60. EBSCOhost, https://doi.org/10.1016/j.jallcom.2014.05.145.
APA
Tu, C.-H., Chang, C.-C., Wang, C.-H., Fang, H.-C., Huang, M. R. S., Li, Y.-C., Chang, H.-J., Lu, C.-H., Chen, Y.-C., Wang, R.-C., Tzeng, Y., & Liu, C.-P. (2014). Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires. Journal of Alloys & Compounds, 615, 754–760. https://doi.org/10.1016/j.jallcom.2014.05.145
Chicago
Tu, Chia-Hao, Che-Chia Chang, Chao-Hung Wang, Hisn-Chiao Fang, Michael R.S. Huang, Yi-Chang Li, Hung-Jen Chang, et al. 2014. “Resistive Memory Devices with High Switching Endurance through Single Filaments in Bi-Crystal CuO Nanowires.” Journal of Alloys & Compounds 615 (December): 754–60. doi:10.1016/j.jallcom.2014.05.145.