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Spectroscopic ellipsometry on the millisecond time scale for real-time investigations of thin-film and surface phenomena.
- Source :
-
Review of Scientific Instruments . Aug1992, Vol. 63 Issue 8, p3842. 7p. - Publication Year :
- 1992
-
Abstract
- Submonolayer sensitivity to thin-film nucleation and growth in real time on the millisecond scale has been achieved with a unique rotating polarizer multichannel ellipsometer. Continuous spectra in the ellipsometry angles {ψ(hv),Δ(hv)} consisting of ∼50 points from hv=1.5 to 4.3 eV have been obtained with acquisition and repetition times as short as 16 and 32 ms, respectively. As an example of the instrument capabilities, we present results for hydrogenated amorphous silicon (a-Si:H) growth on c-Si by plasma-enhanced chemical vapor deposition at a rate of 400 Å/min. In this example, the acquisition and repetition times are both 64 ms, and at this speed a precision in (ψ,Δ) of ∼0.02–0.03° is obtained under optimum conditions. We observe a-Si:H nucleation in the first 2 s of deposition, and detect relaxation of nucleation-induced surface roughness with submonolayer sensitivity. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN films
*ELLIPSOMETRY
Subjects
Details
- Language :
- English
- ISSN :
- 00346748
- Volume :
- 63
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Review of Scientific Instruments
- Publication Type :
- Academic Journal
- Accession number :
- 9781746
- Full Text :
- https://doi.org/10.1063/1.1143280