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Unipolar resistive switching behavior of amorphous YCrO3 films for nonvolatile memory applications.
- Source :
-
Journal of Applied Physics . 2014, Vol. 116 Issue 8, p084505-1-084505-5. 5p. - Publication Year :
- 2014
-
Abstract
- Amorphous YCrO3 (YCO) films were prepared on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of ∼105 between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space-charge limited conduction mechanisms, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 116
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 97850248
- Full Text :
- https://doi.org/10.1063/1.4893661