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Mn-doped TiO2 thin films with significantly improved optical and electrical properties.

Authors :
Lu, Liu
Xia, Xiaohong
Luo, J. K.
Shao, G.
Source :
Journal of Physics D: Applied Physics. 12/5/2012, Vol. 45 Issue 48, p1-1. 1p.
Publication Year :
2012

Abstract

TiO2 thin films with various Mn doping contents were fabricated by reactive magnetron sputtering deposition at 550 °C and their structural, optical and electrical properties were characterized. All films were made of densely packed columnar grains with a fibrous texture along the normal direction of the substrate. The as-deposited structure in the pure TiO2 film consisted of anatase grains with the [1 0 1] texture. Mn incorporation stabilized the rutile phase and induced lattice contraction in the [1 0 0] direction. The texture in the Mn-doped films changed from [1 1 0] to [2 0 0] with increasing Mn content. The incorporation of Mn in the TiO2 lattice introduced intermediate bands into its narrowed forbidden gap, leading to remarkable red-shifts in the optical absorption edges, together with significantly improved electrical conductivity of the thin films. Hall measurement showed that the incorporation of Mn-induced p-type conductivity, with hole mobility in heavily doped TiO2 (∼40% Mn) being about an order higher than electron mobility in single-crystal rutile TiO2. Oxygen vacancies, on the other hand, interacted with substitutional Mn atoms to reduce its effect on optical and electrical properties. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00223727
Volume :
45
Issue :
48
Database :
Academic Search Index
Journal :
Journal of Physics D: Applied Physics
Publication Type :
Academic Journal
Accession number :
97862478
Full Text :
https://doi.org/10.1088/0022-3727/45/48/485102