Back to Search
Start Over
Mn-doped TiO2 thin films with significantly improved optical and electrical properties.
- Source :
-
Journal of Physics D: Applied Physics . 12/5/2012, Vol. 45 Issue 48, p1-1. 1p. - Publication Year :
- 2012
-
Abstract
- TiO2 thin films with various Mn doping contents were fabricated by reactive magnetron sputtering deposition at 550 °C and their structural, optical and electrical properties were characterized. All films were made of densely packed columnar grains with a fibrous texture along the normal direction of the substrate. The as-deposited structure in the pure TiO2 film consisted of anatase grains with the [1 0 1] texture. Mn incorporation stabilized the rutile phase and induced lattice contraction in the [1 0 0] direction. The texture in the Mn-doped films changed from [1 1 0] to [2 0 0] with increasing Mn content. The incorporation of Mn in the TiO2 lattice introduced intermediate bands into its narrowed forbidden gap, leading to remarkable red-shifts in the optical absorption edges, together with significantly improved electrical conductivity of the thin films. Hall measurement showed that the incorporation of Mn-induced p-type conductivity, with hole mobility in heavily doped TiO2 (∼40% Mn) being about an order higher than electron mobility in single-crystal rutile TiO2. Oxygen vacancies, on the other hand, interacted with substitutional Mn atoms to reduce its effect on optical and electrical properties. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00223727
- Volume :
- 45
- Issue :
- 48
- Database :
- Academic Search Index
- Journal :
- Journal of Physics D: Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 97862478
- Full Text :
- https://doi.org/10.1088/0022-3727/45/48/485102