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Mismatch Characterization of Small Metal Fringe Capacitors.
- Source :
-
IEEE Transactions on Circuits & Systems. Part I: Regular Papers . Aug2014, Vol. 61 Issue 8, p2236-2242. 7p. - Publication Year :
- 2014
-
Abstract
- Even though small metal fringe capacitors are important for the realization of a variety of circuits, including low-energy analog-to-digital converters and digitally controlled oscillators, the present literature is lacking experimental data on their mismatch characteristics. This paper describes a test structure and measurement results pertaining to the characterization of single-layer, lateral-field, 0.45-fF and 1.2-fF unit metal capacitors in a 32-nm SOI CMOS process. The measurement-inferred average standard deviations for these capacitances are 1.2% and 0.8%, respectively, confirming area scaling according to Pelgrom's matching formula. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15498328
- Volume :
- 61
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers
- Publication Type :
- Periodical
- Accession number :
- 98013742
- Full Text :
- https://doi.org/10.1109/TCSI.2014.2332264