Effect of In additive on the electrical properties of Se–Te alloy.

Electrical measurements are done on Se85−xTe15Inx (x = 0, 2, 4, 6 and 10 at%) thin films. The dark conductivity (σd) increases and the activation energy (ΔEd) decreases as the In concentration increases. The photoconductivity (σph) also increases with the increase in In concentration. The photosensitivity (σph/σd) decreases sharply after the In incorporation. The charge carrier concentration (nσ) is calculated with the help of dc conductivity measurements. The value of nσ increases as the In concentration increases. The results are explained on the basis of an increase in the density of localized states present in the mobility gap. [ABSTRACT FROM AUTHOR]