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Optimized dual temperature pulsed laser deposition of TiO2 to realize MTOS (metal-TiO2–SiO2–Si) capacitors with ultrathin gate dielectric.

Authors :
Singh, Ravneet
Paily, Roy
DasGupta, Amitava
DasGupta, Nandita
Misra, Pankaj
Kukreja, Lalit M.
Source :
Semiconductor Science & Technology. Jan2005, Vol. 20 Issue 1, p1-1. 1p.
Publication Year :
2005

Abstract

In this work, metal-TiO2–SiO2–Si (MTOS) capacitors have been fabricated where the TiO2 layers have been deposited by the pulsed laser deposition technique followed by annealing at different temperatures. MTOS devices with an effective dielectric thickness (EDT) as low as 1.6 nm and very low leakage current have been realized by using a two-step deposition process in which a buffer layer of TiO2 has first been deposited at 300 °C. This was followed by deposition and annealing of TiO2 at 750 °C. It has also been shown that the annealing temperature plays a significant role in determining the EDT of the dielectric film as well as the electrical characteristics of the MTOS capacitors. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
02681242
Volume :
20
Issue :
1
Database :
Academic Search Index
Journal :
Semiconductor Science & Technology
Publication Type :
Academic Journal
Accession number :
98047623
Full Text :
https://doi.org/10.1088/0268-1242/20/1/006