Spin-dependent tunneling rates for electrostatically defined GaAs quantum dots.

The tunneling rates for spin-up and -down electrons are investigated for a GaAs quantum dot in an in-plane magnetic field by using a real-time single-electron counting scheme with a nearby charge detector. An extremely small spin-polarized current on the order of attoamperes is analyzed with the spin and energy dependences of the tunneling rates. Fully spin-polarized current is obtained when only a spin-up Zeeman sublevel is located in the transport window. When both Zeeman sublevels are allowed to contribute to the transport, we find that the tunneling rate for spin-up electrons is considerably higher than that for spin-down electrons. This partially spin-polarized current can be explained by the exchange-enhanced spin splitting in low-density regions near the tunneling barriers. [ABSTRACT FROM AUTHOR]