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Spin-dependent tunneling rates for electrostatically defined GaAs quantum dots.
- Source :
-
Physical Review B: Condensed Matter & Materials Physics . Jul2014, Vol. 90 Issue 3, p035306-1-035306-6. 6p. - Publication Year :
- 2014
-
Abstract
- The tunneling rates for spin-up and -down electrons are investigated for a GaAs quantum dot in an in-plane magnetic field by using a real-time single-electron counting scheme with a nearby charge detector. An extremely small spin-polarized current on the order of attoamperes is analyzed with the spin and energy dependences of the tunneling rates. Fully spin-polarized current is obtained when only a spin-up Zeeman sublevel is located in the transport window. When both Zeeman sublevels are allowed to contribute to the transport, we find that the tunneling rate for spin-up electrons is considerably higher than that for spin-down electrons. This partially spin-polarized current can be explained by the exchange-enhanced spin splitting in low-density regions near the tunneling barriers. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM dots
*MAGNETIC tunnelling
*ELECTRONS
*MAGNETIC fields
*ZEEMAN effect
Subjects
Details
- Language :
- English
- ISSN :
- 10980121
- Volume :
- 90
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Physical Review B: Condensed Matter & Materials Physics
- Publication Type :
- Academic Journal
- Accession number :
- 98131673
- Full Text :
- https://doi.org/10.1103/PhysRevB.90.035306