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Interface structure and chemistry in ZnSe/Ga[sub 1-x]Mn[sub x]As/ZnSe heterostructures.
- Source :
-
Applied Physics Letters . 5/26/2003, Vol. 82 Issue 21, p3656. 3p. 2 Diagrams, 1 Chart, 1 Graph. - Publication Year :
- 2003
-
Abstract
- The structure and chemical composition of ZnSe/Ga[sub 1-x]Mn[sub x]As/ZnSe multilayers grown on (100) GaAs substrates are investigated by high-resolution transmission electron microscopy imaging and spectroscopy techniques. While all layers grow epitaxially and the Ga[sub 1-x]Mn[sub x]As layer is free of planar defects, a high density of stacking faults is observed in the ZnSe layer over Ga[sub 1-x]Mn[sub x]As. The composition of the ferromagnetic layer is measured to be Ga[sub 0.93]Mn[sub 0.07]As, and the Mn valence was determined to be 2[sup +]. Compositional profiles across the interfaces quantified by electron energy-loss spectroscopy show that the ZnSe/Ga[sub 1-x]Mn[sub x]As interfaces are wider than the ZnSe/ GaAs-substrate interface, which is mainly attributed to interfacial roughness. [ABSTRACT FROM AUTHOR]
- Subjects :
- *MULTILAYERED thin films
*GALLIUM arsenide
*INTERFACES (Physical sciences)
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 82
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9815644
- Full Text :
- https://doi.org/10.1063/1.1577825