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A highly linear CMOS low noise amplifier for K-band applications.
- Source :
-
International Journal of Electronics . Dec2014, Vol. 101 Issue 12, p1607-1620. 14p. - Publication Year :
- 2014
-
Abstract
- This paper describes a highly linear low noise amplifier (LNA) for K-band applications in a 0.18 µm RF CMOS technology. The core of the circuit is a two-stage LNA consisting of a common-source and a cascode stage. By adopting an improved post-linearisation technique at the common-source transistor of the second stage, more than 5 dB improvement in IIP3 is achieved with a minor effect on noise figure and input matching. The circuit level analysis and simulation results are presented to demonstrate the effectiveness of the proposed technique. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00207217
- Volume :
- 101
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- International Journal of Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 98164284
- Full Text :
- https://doi.org/10.1080/00207217.2014.888775