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Cavity length dependence of the wavelength of strained-layer InGaAs/GaAs lasers.

Authors :
Chen, T. R.
Zhuang, Y. H.
Eng, L. E.
Yariv, A.
Source :
Applied Physics Letters. 12/3/1990, Vol. 57 Issue 23, p2402. 2p.
Publication Year :
1990

Abstract

The lasing wavelength of a strained-layer InGaAs/GaAs single quantum well laser has been found to depend strongly on the cavity length. The relationship between the lasing wavelength and the cavity length was established experimentally and a cavity length tuning mechanism for a quantum well laser is thus made possible. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
57
Issue :
23
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
9818112
Full Text :
https://doi.org/10.1063/1.103858