Cite
Capacitance-voltage and current-voltage characteristics of molecular beam epitaxially grown p+-GaAs/AlAs/n-GaAs heterostructures.
MLA
Cooper, J. A., et al. “Capacitance-Voltage and Current-Voltage Characteristics of Molecular Beam Epitaxially Grown P+-GaAs/AlAs/n-GaAs Heterostructures.” Applied Physics Letters, vol. 48, no. 5, Feb. 1986, p. 365. EBSCOhost, https://doi.org/10.1063/1.96553.
APA
Cooper, J. A., Qian, Q.-D., & Melloch, M. R. (1986). Capacitance-voltage and current-voltage characteristics of molecular beam epitaxially grown p+-GaAs/AlAs/n-GaAs heterostructures. Applied Physics Letters, 48(5), 365. https://doi.org/10.1063/1.96553
Chicago
Cooper, J. A., Q-D. Qian, and M. R. Melloch. 1986. “Capacitance-Voltage and Current-Voltage Characteristics of Molecular Beam Epitaxially Grown P+-GaAs/AlAs/n-GaAs Heterostructures.” Applied Physics Letters 48 (5): 365. doi:10.1063/1.96553.