Observation of local lattice distortion induced by In doping in GaAs.

Authors :: Fujiwara, Y.
Kita, Y.
Tonami, Y.
Nishino, T.
Hamakawa, Y.
Source :: Applied Physics Letters. 7/21/1986, Vol. 49 Issue 3, p161. 3p.
Publication Year :: 1986
Abstract: The In concentration dependence of newly observed Cr-related luminescence lines has been systematically investigated by a low-temperature photoluminescence (PL) method in In,Cr-codoped GaAs. As a result, it has been found that the luminescence center of these In,Cr-related PL lines is a complex of InGa-CrGa-VAs. Furthermore, their relative peak positions with respect to the well-known Cr-VAs PL line have been analyzed by using uniaxial stress data, the result suggesting that local lattice distortion of about 1% is induced by In doping in GaAs. [ABSTRACT FROM AUTHOR]