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Photoexcited transport in GaAs/AlAs quantum wells.
- Source :
-
Applied Physics Letters . 8/18/1986, Vol. 49 Issue 7, p406. 3p. - Publication Year :
- 1986
-
Abstract
- We present the results of a study of the transport of optically excited carriers perpendicular to weakly coupled GaAs/AlAs multiple quantum wells imbedded in the depletion region of a p-i-n photodiode. At temperatures above 120 K the photocurrent was thermally activated. For lower temperatures the photocurrent decreased as temperature was increased. Wavelength-dependent negative differential resistance regions were present in the reverse bias region of the photoexcited current voltage (I-V) curve as a result of the Stark shifts of the lowest energy heavy hole (h1) and light hole (l1) excitons. Additional wavelength independent structure was also visible in the photoexcited I-V curves. [ABSTRACT FROM AUTHOR]
- Subjects :
- *CATALYST supports
*QUANTUM wells
*PHOTODIODES
*ELECTRIC currents
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 49
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9820587
- Full Text :
- https://doi.org/10.1063/1.97602