Response to ‘‘Comment on ‘Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition’ ’’ [Appl. Phys. Lett. 50, 1533 (1987)].

Replies to a comment by Segall et al on the article 'Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SlC single crystals grown by chemical vapor deposition.' Agreement with the commenters' choice of 0.346 as a reasonable value for the density-of-state effective mass for a single-band minimum; Opposition to the suggestion that donors in non-doped films are nitrogen.