Growth and characterization of silicon molecular beam epilayers on GaP (111) substrates.

Silicon molecular beam epitaxy on thermally cleaned GaP(111) substrates has been prepared at 450 °C with the growth rate of 0.2 Å/s. The P segregation on the surface of Si epilayer beyond the thickness of 1500 Å has been observed. The surface of epilayer has the same (1×1) periodicity as that of the substrate when the thickness of the epilayer is less than 500 Å. Above 500 Å, the surface shows a (3×3) reconstruction. It is suggested that both (1×1) and (3×3) geometries are P-stabilized surface structures. [ABSTRACT FROM AUTHOR]