Cite
Characterization of InP/GaAs epilayers grown on Si substrates by low-pressure organometallic vapor phase epitaxy.
MLA
Lee, M. K., et al. “Characterization of InP/GaAs Epilayers Grown on Si Substrates by Low-Pressure Organometallic Vapor Phase Epitaxy.” Applied Physics Letters, vol. 52, no. 11, Mar. 1988, p. 880. EBSCOhost, https://doi.org/10.1063/1.99260.
APA
Lee, M. K., Wuu, D. S., Tung, H. H., Yu, K. Y., & Huang, K. C. (1988). Characterization of InP/GaAs epilayers grown on Si substrates by low-pressure organometallic vapor phase epitaxy. Applied Physics Letters, 52(11), 880. https://doi.org/10.1063/1.99260
Chicago
Lee, M. K., D. S. Wuu, H. H. Tung, K. Y. Yu, and K. C. Huang. 1988. “Characterization of InP/GaAs Epilayers Grown on Si Substrates by Low-Pressure Organometallic Vapor Phase Epitaxy.” Applied Physics Letters 52 (11): 880. doi:10.1063/1.99260.