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Switching and memory phenomena in Langmuir–Blodgett films.

Authors :
Sakai, K.
Matsuda, H.
Kawada, H.
Eguchi, K.
Nakagiri, T.
Source :
Applied Physics Letters. 10/3/1988, Vol. 53 Issue 14, p1274. 3p.
Publication Year :
1988

Abstract

Reproducible memory switching has been observed in metal/ Langmuir–Blodgett (LB) film/metal sandwich structures: LB films consist of organic molecules such as dyes having a number of conjugated bonds. The device switches from a nonconducting off state to a conducting on state via an intermediate state, and it switches directly from the on to the off state within less than 10 ns upon the application of a voltage. Both off-state and on-state resistances of the device depend linearly on the number of monolayers, the conduction being predominantly through the LB films. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
53
Issue :
14
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
9828312
Full Text :
https://doi.org/10.1063/1.100449