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Preparation of ferroelectric BaTiO3 thin films by activated reactive evaporation.
- Source :
-
Applied Physics Letters . 2/5/1990, Vol. 56 Issue 6, p527. 3p. - Publication Year :
- 1990
-
Abstract
- Ferroelectric BaTiO3 thin films were directly and epitaxially grown on SrTiO3 single crystal and epitaxial Pt film substrates by activated reactive evaporation. The substrate temperature was around 600 °C. For (100) oriented as-grown films, a typical ferroelectric hysteresis loop and a maximum of dielectric constant at about 115 °C were observed. The resistivity was as high as 109 Ω cm and the breakdown voltage was 2.7 MV/cm for as-grown BaTiO3 films. [ABSTRACT FROM AUTHOR]
- Subjects :
- *FERROELECTRIC thin films
*BARIUM compounds
*STRONTIUM compounds
*PLATINUM
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 56
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9833609
- Full Text :
- https://doi.org/10.1063/1.103300