Electrical and structural properties of shallow p+ junctions formed by dual (Ga/B) ion implantation.

Ultrashallow p+ junctions formed by dual implanation of Ga and B with low-temperature rapid thermal anneal (RTA) are reported. The electrical and structural properties of the shallow junction were studied by sheet resistance and diode reverse recovery measurements, Rutherford backscattering channeling, and secondary-ion mass spectrometry. A junction of 400 Å depth (full width at half maximum) and an average carrier concentration of 3×1019 cm-3 were realized with RTA at 600 °C. It is shown that there is excess damage in the dual-implanted junctions which affects the minority-carrier lifetime. [ABSTRACT FROM AUTHOR]