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Influences of trace metal impurities on the thermal quenching of photoluminescence in hydrogenated amorphous silicon by homogeneous chemical vapor deposition.
- Source :
-
Applied Physics Letters . 4/16/1990, Vol. 56 Issue 16, p1591. 3p. - Publication Year :
- 1990
-
Abstract
- The influence of trace metal impurities of low-temperature undoped amorphous silicon by homogeneous chemical vapor deposited a-Si:H has been explored for the first time. The metal impurities Ni, Cr, and Fe cause a shift of the transition temperature for the double-activated regime to a relatively low value. However, Ga and B impurities quench the photoluminescence intensity at a low temperature. Both of them cause weak photoemission of the films at room temperature. The shift of the transition temperature can be explained by the presence of non-radiative deep recombination centers. The quenching of the photoluminescence intensity is caused by the presence of nonradiative recombination centers. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SILICON
*AMORPHOUS semiconductors
*PHOTOLUMINESCENCE
*INDUSTRIAL contamination
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 56
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9833944
- Full Text :
- https://doi.org/10.1063/1.103137