Anomalous silicon and tin doping behavior in indium phosphide grown by chemical beam epitaxy.

MLA

Skevington, P. J., et al. “Anomalous Silicon and Tin Doping Behavior in Indium Phosphide Grown by Chemical Beam Epitaxy.” Applied Physics Letters, vol. 56, no. 16, Apr. 1990, p. 1546. EBSCOhost, https://doi.org/10.1063/1.103170.

APA

Skevington, P. J., Andrews, D. A., & Davies, G. J. (1990). Anomalous silicon and tin doping behavior in indium phosphide grown by chemical beam epitaxy. Applied Physics Letters, 56(16), 1546. https://doi.org/10.1063/1.103170

Chicago

Skevington, P. J., D. A. Andrews, and G. J. Davies. 1990. “Anomalous Silicon and Tin Doping Behavior in Indium Phosphide Grown by Chemical Beam Epitaxy.” Applied Physics Letters 56 (16): 1546. doi:10.1063/1.103170.