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High-Field Domain Formation in Thyristor Structures at Ultrahigh Current Densities.
- Source :
-
Technical Physics Letters . May2003, Vol. 29 Issue 5, p370. 3p. - Publication Year :
- 2003
-
Abstract
- We have studied the mechanism of high-field domain formation in thyristor structures at ultrahigh current densities (J &Ge; 100 A/cm[SUP2]) and the related effect of anomalous buildup of the direct residual voltage. The analysis is based on the results of numerical simulation of the process of double injection with allowance for accompanying nonlinear effects. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THYRISTORS
*ELECTRIC power
*POWER semiconductors
*ELECTRIC current rectifiers
Subjects
Details
- Language :
- English
- ISSN :
- 10637850
- Volume :
- 29
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Technical Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9872719
- Full Text :
- https://doi.org/10.1134/1.1579797