High-Field Domain Formation in Thyristor Structures at Ultrahigh Current Densities.

We have studied the mechanism of high-field domain formation in thyristor structures at ultrahigh current densities (J &Ge; 100 A/cm[SUP2]) and the related effect of anomalous buildup of the direct residual voltage. The analysis is based on the results of numerical simulation of the process of double injection with allowance for accompanying nonlinear effects. [ABSTRACT FROM AUTHOR]