Cite
Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds.
MLA
Sochacki, T., et al. “Examination of Growth Rate during Hydride Vapor Phase Epitaxy of GaN on Ammonothermal GaN Seeds.” Journal of Crystal Growth, vol. 407, Dec. 2014, pp. 52–57. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2014.09.007.
APA
Sochacki, T., Amilusik, M., Fijalkowski, M., Lucznik, B., Weyher, J. L., Grzegory, I., Kucharski, R., Iwinska, M., & Bockowski, M. (2014). Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds. Journal of Crystal Growth, 407, 52–57. https://doi.org/10.1016/j.jcrysgro.2014.09.007
Chicago
Sochacki, T., M. Amilusik, M. Fijalkowski, B. Lucznik, J.L. Weyher, I. Grzegory, R. Kucharski, M. Iwinska, and M. Bockowski. 2014. “Examination of Growth Rate during Hydride Vapor Phase Epitaxy of GaN on Ammonothermal GaN Seeds.” Journal of Crystal Growth 407 (December): 52–57. doi:10.1016/j.jcrysgro.2014.09.007.