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Operation of thin-film gated SOI lateral PIN photodetectors with gate voltage applied and intrinsic length variation.
- Source :
-
Optik - International Journal for Light & Electron Optics . Nov2014, Vol. 125 Issue 21, p6483-6487. 5p. - Publication Year :
- 2014
-
Abstract
- This paper describes the operation principle of thin-film gated SOI lateral PIN photodetectors, and an analytical model of depletion voltage is presented and validated by two-dimensional Atlas simulations. With gate voltage applied to achieve fully depleted (FD) condition in intrinsic region, the variation of intrinsic length ( L i ) on photocurrent and dark current characteristics, sensitivity, and speed is addressed. With L i between 1 and 10 μm, the simulated results predict internal quantum efficiency (QI) in excess of 95% even near 100% at a 400 nm wavelength. Also, QI can yield over 87% for the long channels. Under FD condition, the total −3 dB frequency value can achieve 16 GHz (19 GHz) for L i = 1 and 4.1 GHz (6.2 GHz) for L i = 2 μm with V K = 1.0 V (2.0 V). And a high ratio of more than 10 7 between illuminated and dark currents can be yielded for all detectors realized in 0.18 μm SOI CMOS technology. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00304026
- Volume :
- 125
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Optik - International Journal for Light & Electron Optics
- Publication Type :
- Academic Journal
- Accession number :
- 98853173
- Full Text :
- https://doi.org/10.1016/j.ijleo.2014.08.038