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Photon-enhanced secondary electron emission at target in plasma immersion ion implantation
- Source :
-
Nuclear Instruments & Methods in Physics Research Section B . May2003, Vol. 206 Issue 1-4, p798. 5p. - Publication Year :
- 2003
-
Abstract
- This paper describes effects of vacuum ultraviolet (VUV) optical emission from the plasma on the secondary electron emission coefficient (SEEC) in PIII processes. To examine this, time-resolved measurements of the VUV emission intensity and the SEEC are performed in continuous and square-wave-modulated discharges. For all the measured data, a good linearity between the SEEC and the VUV intensity is found out, and the ion-induced SEEC can be distinguished from the photon-induced SEEC. In the afterglow of the modulated discharge, the SEEC decreases because the VUV emission intensity. Therefore, ion implantation in the afterglow allows us to reduce a current requirement of the pulse generator, leading to low-cost PIII processes. [Copyright &y& Elsevier]
- Subjects :
- *ION implantation
*PLASMA gases
Subjects
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 206
- Issue :
- 1-4
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section B
- Publication Type :
- Academic Journal
- Accession number :
- 9892254
- Full Text :
- https://doi.org/10.1016/S0168-583X(03)00852-8