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Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate.
- Source :
-
Applied Physics Letters . 10/20/2014, Vol. 105 Issue 16, p1-4. 4p. 1 Color Photograph, 1 Diagram, 2 Graphs. - Publication Year :
- 2014
-
Abstract
- High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 105
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 99070453
- Full Text :
- https://doi.org/10.1063/1.4898811