Cite
Radiative recombination mechanism of carriers in InGaN/AlInGaN multiple quantum wells with varying aluminum content.
MLA
Liu, Tong, et al. “Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content.” Journal of Alloys & Compounds, vol. 621, Feb. 2015, pp. 12–17. EBSCOhost, https://doi.org/10.1016/j.jallcom.2014.09.170.
APA
Liu, T., Jiao, S., Wang, D., Gao, S., Yang, T., Liang, H., & Zhao, L. (2015). Radiative recombination mechanism of carriers in InGaN/AlInGaN multiple quantum wells with varying aluminum content. Journal of Alloys & Compounds, 621, 12–17. https://doi.org/10.1016/j.jallcom.2014.09.170
Chicago
Liu, Tong, Shujie Jiao, Dongbo Wang, Shiyong Gao, Tianpeng Yang, Hongwei Liang, and Liancheng Zhao. 2015. “Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content.” Journal of Alloys & Compounds 621 (February): 12–17. doi:10.1016/j.jallcom.2014.09.170.