High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films.

Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B4C target in an Ar/N2 gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ~1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V. [ABSTRACT FROM AUTHOR]